ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,359, issued on June 3, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).
"Method of manufacturing semiconductor structure and semiconductor structure" was invented by Yulei Wu (Hefei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method of manufacturing a semiconductor structure and a semiconductor structure. The method of manufacturing a semiconductor structure includes: providing a substrate; forming bottom contact structures in the substrate; forming a storage unit on each of the bottom contact structures; and forming shielding structures that each wrap around one of the storage units, where...