US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 3 for "Method for manufacturing semiconductor device and semiconductor device" (Chinese Inventor)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,139, issued on June 3, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for manufacturing semiconductor device and semiconductor device" was invented by Xiaojie Li (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device includes providing a semiconductor substrate including a first and second regions; forming a first dielectric layer on the semiconductor substrate; forming a temporary layer on the first dielectric layer; performing a first heat treatment process on the first dielectric layer and the temporary layer; removing the temporary layer to expose the first dielect...