US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 3 for "Method for forming semiconductor structure and semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,147, issued on June 3, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for forming semiconductor structure and semiconductor structure" was invented by Jinghao Wang (Hefei, China) and Junbo Pan (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor structure includes: a substrate is provided, in which active areas arranged in a matrix and isolation structures for isolating active areas from each other are formed in substrate, a first direction is a column direction of matrix and a second direction is a row direction of matrix; a conductive layer is formed on substrate; at least cond...