US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 3 for "Method for forming semiconductor structure and a semiconductor" (Chinese Inventor)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,148, issued on June 3, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for forming semiconductor structure and a semiconductor" was invented by Chih-Cheng Liu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The embodiments of the present application provide a semiconductor structure manufacturing method for forming a semiconductor structure. The method includes: forming a plurality of discrete transistor structures (102) on a substrate (101); forming a dielectric layer (111) covering the transistor structure (102); forming a plurality of metal lines (103) on the top surface of the dielectric layer (111); forming...