US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 3 for "Method, device and system for measuring frequency domain characteristics, and storage medium" (Chinese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,320,830, issued on June 3, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method, device and system for measuring frequency domain characteristics, and storage medium" was invented by Maosong Ma (Hefei, China), Yaqi Fang (Hefei, China) and Jianbin Liu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for measuring frequency domain characteristics of a PDN having an output terminal connected to a power supply end of a functional circuit. The method includes: a to-be-measured output interface of the functional circuit is acquired; the to-be-measured output interface is controlled to output a first level signal having...