ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,141, issued on June 3, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).
"Memory and method for forming same" was invented by Juanjuan Huang (Hefei, China), Yi Jiang (Hefei, China), Weiping Bai (Hefei, China) and Deyuan Xiao (Hefei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a memory includes the following operations: a substrate and a semiconductor layer located on the substrate are formed; the semiconductor layer is patterned to form a plurality of first isolation structures and channel regions, each first isolation structure includes a first through hole and a second through hole, and a first isolatio...