US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 3 for "Heating device and heating method for semiconductor thermal process" (Chinese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,612, issued on June 3, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Heating device and heating method for semiconductor thermal process" was invented by Wanzheng Chen (Hefei, China) and Le Wang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a heating device and heating method for a semiconductor thermal process. The heating device includes: a first heating portion, on which a wafer to-be-heated is placed; a second heating portion, where the first heating portion and the second heating portion are arranged in parallel, and the second heating portion is configured to heat the first hea...