US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 3 for "Guard ring structure, semiconductor structure and manufacturing method" (Chinese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,671, issued on June 3, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Guard ring structure, semiconductor structure and manufacturing method" was invented by Hua Yan (Hefei, China) and Hsin-Pin Huang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A guard ring structure includes: a bottom metal layer; a protection structure located on the bottom metal layer, wherein the protection structure includes an insertion portion, an interconnection portion, and a metal layer stacked in sequence from bottom to top, and the insertion portion is inserted into the nearest underlining metal layer under the interconnection."

The pa...