US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 24 for "Semiconductor structure and method for fabricating semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,594, issued on June 24, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for fabricating semiconductor structure" was invented by Tieh-Chiang Wu (Hefei, China) and Lingxin Zhu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a semiconductor structure and a method for fabricating a semiconductor structure. The semiconductor structure includes: a source region and a drain region arranged at intervals on a substrate; a gate oxide layer arranged between the source region and the drain region; a gate structure arranged on the gate oxide layer; and a conductive plug arran...