US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 24 for "Semiconductor structure and manufacturing method thereof and memory" (Chinese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,529, issued on June 24, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof and memory" was invented by Juanjuan Huang (Hefei, China), Weiping Bai (Hefei, China) and Deyuan Xiao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes: a plurality of transistors located in a semiconductor layer; each of the transistors including a semiconductor body extending in a first direction and a gate structure covering at least one side surface of the semiconductor body; the first direction being a thickness direction of the semiconductor layer; a pl...