US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 24 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,522, issued on June 24, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Yang Chen (Hefei, China), Xinru Han (Hefei, China) and Shiran Zhang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure provide a semiconductor structure and a manufacturing method thereof. The manufacturing method includes: providing a substrate, and forming a sacrificial dielectric layer on the substrate; patterning a part of the sacrificial dielectric layer along a first direction, and forming a plurality of first trenches arranged at int...