US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 24 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,586, issued on June 24, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Yanhong Zhang (Hefei, China) and Peng Yang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure and a manufacturing method thereof. The manufacturing method of a semiconductor structure includes providing a substrate having trenches, regions other than the trenches in the substrate form a plurality of active regions at intervals; forming a first isolation layer and a second isolation layer, a top surface of the first isola...