US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 24 for "Semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,341,094, issued on June 24, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure" was invented by Kun Weng (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure, including: a plurality of metal layers and a substrate, wherein the plurality of metal layers include a first metal layer, a second metal layer, and a third metal layer; a plurality of virtual metal blocks and at least one signal line are disposed on the metal layers; the virtual metal blocks on the metal layers are staggered in a direction perpendicular to the substrate; a second distance bet...