ALEXANDRIA, Va., June 25 -- United States Patent no. 12,341,132, issued on June 24, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).
"Semiconductor structure" was invented by Cheng-Jer Yang (Hefei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure, including a stacked structure, wherein the stacked structure includes a plurality of stacked semiconductor dies, and each of the semiconductor dies includes: a first base; a channel provided on the first base; and at least one first auxiliary through electrode and a plurality of connection through electrodes running through the first base, wherein the at least one first auxiliary through...