US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 24 for "Preparation method for semiconductor structure and same" (Chinese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,341,010, issued on June 24, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Preparation method for semiconductor structure and same" was invented by Longyang Chen (Hefei, China), Shijie Bai (Hefei, China), Zhongming Liu (Hefei, China), Yexiao Yu (Hefei, China), Xianguo Zhou (Hefei, China) and Bin Zhao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A preparation method for a semiconductor structure and a semiconductor structure are provided. Herein, the preparation method comprises: providing a structure to be processed, wherein the structure to be processed comprises a substrate, and an etching target layer, a bottom mas...