US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 24 for "Method for manufacturing semiconductor structure and semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,525, issued on June 24, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for manufacturing semiconductor structure and semiconductor structure" was invented by Jingwen Lu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor structure includes: providing a substrate and multiple spaced active areas on the substrate and an isolation structure between the adjacent active areas, in which, each of active areas includes multiple sub-active areas which intersect the initial bit line, and an initial bit line is provided on the substrate; patterning the active areas, the isolation st...