ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,523, issued on June 24, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).
"Method for manufacturing memory and memory" was invented by Weiping Bai (Hefei, China), Li Zhu (Hefei, China) and Zhan Ying (Hefei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a method for manufacturing a memory and a memory, which relate to the technical field of memory devices and are used to solve the technical problems of relatively low storage speed and storage efficiency. The manufacturing method includes: providing a substrate, a plurality of capacitor contact pads being disposed at intervals in the substrate; f...