US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 24 for "Method for forming a semiconductor device pillar with source, channel, and drain" (Chinese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,340,870, issued on June 24, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for forming a semiconductor device pillar with source, channel, and drain" was invented by Yiming Zhu (Hefei, China) and Erxuan Ping (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method for forming the same, and a memory and a method for forming the same are provided. The method for forming the semiconductor structure includes: providing a substrate, in which a sacrificial layer and an active layer on the sacrificial layer are formed on the substrate; patterning the active layer and the sacrificial layer to...