US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 24 for "Method for fabricating semiconductor device and semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,524, issued on June 24, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for fabricating semiconductor device and semiconductor device" was invented by Semyeong Jang (Hefei, China), Joonsuk Moon (Hefei, China), Deyuan Xiao (Hefei, China) and Jo-Lan Chin (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a fabricating method are provided. The semiconductor structure includes a substrate, active pillars, gate structures, a metal silicide layer, and a spacer. The active pillars are positioned on the substrate and are arranged in an array, and the active pillars extend along a direction pe...