US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 24 for "Method for fabricating array structure of columnar capacitor and semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,554, issued on June 24, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for fabricating array structure of columnar capacitor and semiconductor structure" was invented by Qiang Wan (Hefei, China), Jun Xia (Hefei, China), Kangshu Zhan (Hefei, China), Sen Li (Hefei, China), Tao Liu (Hefei, China) and Penghui Xu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a method for fabricating an array structure of a columnar capacitor and a semiconductor structure, relating to the field of semiconductor manufacturing technology. In the method, before a mask layer is removed, a thickness of the mask laye...