US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 24 for "Method for fabricating a semiconductor structure with pillar array and semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,534, issued on June 24, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for fabricating a semiconductor structure with pillar array and semiconductor structure" was invented by Guangsu Shao (Hefei, China), Deyuan Xiao (Hefei, China), Yunsong Qiu (Hefei, China) and Yi Jiang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments relate to a method for fabricating a semiconductor structure. The method includes: providing a substrate, where pillars arranged in an array are formed on a surface of the substrate, and bit lines extending along a first direction are formed at bottoms of the pillars; forming, betwee...