US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 24 for "Forming method of semiconductor structure and semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,341,073, issued on June 24, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Forming method of semiconductor structure and semiconductor structure" was invented by Huiwen Tang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to the technical field of semiconductors, and provides a forming method of a semiconductor structure and a semiconductor structure. The forming method of a semiconductor structure includes: placing a target structure in a reaction chamber; forming a first oxide layer on the target structure, where the first oxide layer has a first thickness; and forming a second oxide laye...