ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,415, issued on June 17, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).
"Through vias with test structure" was invented by Tzung-Han Lee (Hefei, China) and Chih-Cheng Liu (Hefei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes: a semiconductor substrate; a first metal layer located on a surface of the semiconductor substrate; a second metal layer located above a surface of the first metal layer; an insulating layer located between the first metal layer and the second metal layer and configured to isolate the first metal layer from the second metal layer; and at least four vias located in the ...