US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 17 for "Static random access memory cell and method for forming same" (Chinese Inventor)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,160, issued on June 17, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Static random access memory cell and method for forming same" was invented by Chih-Cheng Liu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A static random access memory cell and a method for forming the same are provided. The method for forming a memory cell includes: providing a base; in which the base at least includes a substrate and an active area formed in the substrate; forming trenches extending in a first direction and arranged in a second direction in the active area; forming second gate structures extending in the first direction in th...