US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 17 for "Semiconductor structure having two word lines covering part of opposite side surfaces of the plurality of semiconductor channels" (Chinese Inventor)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,170, issued on June 17, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure having two word lines covering part of opposite side surfaces of the plurality of semiconductor channels" was invented by Guangsu Shao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a method for fabricating a semiconductor structure and a structure thereof. The method includes: providing a substrate; forming, on the substrate, semiconductor channels arranged in an array along a first direction and a second direction; forming bit lines extending along the first direction, wherein the bit lines are positi...