US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 17 for "Semiconductor structure and method of making the same" (Chinese Inventor)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,393, issued on June 17, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method of making the same" was invented by Jian Yang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosed method provides a solution to the gate-induced drain leakage (GIDL) current in a semiconductor structure. The method includes forming a first trench with a first initial doped region at its bottom, oxidizing the first trench, forming a first oxide layer on the sidewalls of the first trench, and forming a second oxide layer at the bottom of the first trench. The first oxide layer's thickness is greater than ...