US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 17 for "Semiconductor structure and method for manufacturing semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,164, issued on June 17, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for manufacturing semiconductor structure" was invented by Semyeong Jang (Hefei, China), Joonsuk Moon (Hefei, China), Deyuan Xiao (Hefei, China) and Jo-Lan Chin (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes: a base including bit lines arranged at intervals and semiconductor channels arranged at intervals, bit lines extending in first direction, semiconductor channels being located at part of top surfaces of bit lines, each semiconductor channel including first area, second are...