US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 17 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,440, issued on June 17, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Yongxiang Li (Hefei, China) and Min-Hui Chang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a manufacturing method thereof are provided. The manufacturing method includes: providing a substrate; forming an ion implantation area in the substrate, an upper surface of the ion implantation area having a distance from an upper surface of the substrate; forming an initial word line trench in the substrate, the initial word line trench extending from...