US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 17 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,161, issued on June 17, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Chih-Cheng Liu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes: a substrate; a gate structure on the substrate; and an interconnect structure including a first interconnect sub-structure and a second interconnect sub-structure, where the second interconnect sub-structure protrudes from the first interconnect sub-structure. The first interconnect sub-structure is connected with the substrate, and the second interconnect sub-structure is conn...