US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 17 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,219, issued on June 17, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Yumeng Sun (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure belong to the technical field of semiconductor structure manufacturing, and specifically provide a semiconductor structure and a manufacturing method thereof. The manufacturing method specifically includes: a first gate structure on a substrate, a first conductive region and a second conductive region, wherein the first conductive region and the second conductive region are locat...