US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 17 for "Semiconductor structure and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,172, issued on June 17, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and fabrication method thereof" was invented by Tieh-Chiang Wu (Hefei, China) and Lingxin Zhu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments relate to the field of semiconductors, and provide a semiconductor structure and a fabricating method thereof. The semiconductor structure includes: a substrate (100), and a gate oxide layer (110) on a surface of the substrate (100); a gate stack layer (120) positioned on a surface of the gate oxide layer (110); a spacer(130) at least covering a first sidewall of the gate ...