US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 17 for "Semiconductor structure and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,166, issued on June 17, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and fabrication method thereof" was invented by Wentao Xu (Hefei, China), Qiao Li (Hefei, China), Zhi Yang (Hefei, China) and Yue Zhuo (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a semiconductor structure and fabrication method. The method include: forming sacrificial layers on a sidewall of the first pattern mask layer and a sidewall of the second pattern mask layer, and forming a first filling layer filling a first spacing between the sacrificial layers; removing the first filling layer, the first ...