US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 17 for "Semiconductor device and semiconductor layout structure" (Chinese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,441, issued on June 17, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor device and semiconductor layout structure" was invented by Li Tang (Hefei, China), Cheng Chen (Hefei, China), Yuxia Wang (Hefei, China), Wei Jiang (Hefei, China) and Jing Xu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device and a semiconductor layout structure. In the semiconductor device, a guard ring of a first type is arranged on at least one side of a transistor of a second type, and a guard ring of a second type is arranged on at least one side of a transistor of a first type,...