US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 17 for "Resistive memory device and preparation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,441, issued on June 17, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Resistive memory device and preparation method thereof" was invented by Wei Chang (Hefei, China), Jiefang Deng (Hefei, China) and Xiaoguang Wang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present application relate to a resistive memory device and a preparation method thereof. The preparation method includes: providing a base; forming bit line trenches in the base; forming a resistive material layer on a sidewall and the bottom of the bit line trench; and forming a bit line structure in the bit line trench through filling, ...