US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 17 for "Method of manufacturing semiconductor structure and semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,168, issued on June 17, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method of manufacturing semiconductor structure and semiconductor structure" was invented by Yi Tang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure relate to the field of semiconductors, and provide a method of manufacturing a semiconductor structure and a semiconductor structure. The manufacturing method includes: providing a base, and forming active layers and sacrificial layers on the base, wherein two adjacent ones of the active layers constitute an active group, there is a first distance between the acti...