ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,163, issued on June 17, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method of forming bit line contact structure using series of pickling processes to remove native oxide on surface of the active areas" was invented by Xun Yan (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a manufacturing method of a semiconductor structure, and a semiconductor structure. The method includes: providing a substrate, where the substrate has active areas, and grooves or holes each for connecting a bit line structure to the active area are formed on a surface of the substrate; forming a protective laye...