ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,167, issued on June 17, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).
"Method and device for testing memory" was invented by Dong Liu (Hefei, China), Xikun Chu (Hefei, China) and Tianhao Diwu (Hefei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method and device for testing a memory are provided. The method includes the following operations. After activating at least one word line, at least two times of read operations are performed on a to-be-tested memory cell connected to the activated word line. Whether there is a read abnormality in the to-be-tested memory cell is determined according to an output signal obtained a...