US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 17 for "Method and apparatus for determining delay parameter, storage medium, and electronic device" (Chinese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,333,230, issued on June 17, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method and apparatus for determining delay parameter, storage medium, and electronic device" was invented by Yue Chen (Hefei, China) and Zengquan Wu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method and an apparatus for determining a delay parameter, a computer readable storage medium, and an electronic device are provided. The method for determining the delay parameter includes: determining (S210) a setup time of a clock signal in a memory relative to a DQ data signal; dividing (S220) the clock signal into a plurality of clock sub-signals,...