US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 17 for "Method and apparatus for correcting position of wafer and storage medium" (Chinese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,332,625, issued on June 17, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method and apparatus for correcting position of wafer and storage medium" was invented by Zhiling Guo (Hefei, China) and Haoyu Chen (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a method and apparatus for correcting the position of a wafer and a storage medium. The method includes: acquiring etching parameters of preset points on an etched first wafer, wherein the etching parameters include positional information and an etch rate; determining the positional information of the central point of an etch rate distrib...