US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 17 for "Memory and forming method thereof" (Chinese Inventor)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,167, issued on June 17, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Memory and forming method thereof" was invented by Yi Tang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a memory and a forming method thereof. The method of forming a memory includes: forming a stacked layer on a surface of a substrate, the stacked layer including interlayer isolation layers arranged at intervals in a first direction and a sacrificial layer group located between adjacent two of the interlayer isolation layers, the sacrificial layer group including a first sacrificial layer, a second sacrificial...