US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 17 for "Memory, semiconductor structure and formation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,162, issued on June 17, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Memory, semiconductor structure and formation method thereof" was invented by Guangsu Shao (Hefei, China), Xingsong Su (Hefei, China) and Deyuan Xiao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiment relates to the field of semiconductor technology, and more particularly, to a memory, a semiconductor structure and a formation method thereof. The formation method of the present disclosure includes: providing a substrate; forming a plurality of groups of support pillars spaced apart along a first direction in the substrate, each of the plur...