US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 17 for "Manufacturing method of semiconductor structure and semiconductor structure with different functional regions" (Chinese Inventor)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,165, issued on June 17, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Manufacturing method of semiconductor structure and semiconductor structure with different functional regions" was invented by Tao Dou (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosed semiconductor structure includes a window region, a transistor region, and a step region arranged in a first direction. The transistor region includes a word line region and a window region. The method making the semiconductor structure includes: forming active layers at intervals, forming dummy word line structures in the word line region and the step r...