US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 10 for "Method for processing capacitive structure and semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,885, issued on June 10, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for processing capacitive structure and semiconductor structure" was invented by Ang Liu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure provides a method for processing a capacitive structure, and a semiconductor structure. The method for processing the capacitive structure includes the following steps: providing a substrate, forming a landing pad on a surface of the substrate, and etching the landing pad; forming a barrier layer on the surface of the substrate, the barrier layer covering the landing pad; etching the barrier...