US Patent Issued to Changxin Memory Technologies on June 10 for "Memory with error checking and correcting unit" (Chinese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,327,600, issued on June 10, was assigned to Changxin Memory Technologies Inc. (Hefei, China).

"Memory with error checking and correcting unit" was invented by Weibing Shang (Hefei, China), Hongwen Li (Hefei, China), Liang Zhang (Hefei, China), Kangling Ji (Hefei, China), Sungsoo Chi (Hefei, China), Daoxun Wu (Hefei, China) and Ying Wang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory is provided. The memory includes: a storage array that includes multiple bit lines, each of the multiple bit lines is connected to multiple storage cells in the storage array; multiple column select signal units that are connected to sensitive amplifie...