US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 8 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,607, issued on July 8, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Renhu Li (Hefei, China), Ming-Hung Hsieh (Hefei, China), Yong Lu (Hefei, China) and Zhicheng Shi (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a substrate and a word line (WL) structure, wherein the substrate includes trenches arranged in parallel intervals; the WL structure is located in the trenches, and includes a dielectric layer and a conduc...