US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 8 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,608, issued on July 8, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Jingwen Lu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method of a semiconductor structure is provided, and the manufacturing method includes the following operations. A first trench is formed on the semiconductor substrate, in which the first trench penetrates at least two of the conductive channels of a transistor, at least part of each of the conductive channels is located at the bottom of the first trench, an oxide layer is provided between two adjacent...