US Patent Issued to Changxin Memory Technologies on July 8 for "Semiconductor structure and manufacturing method for same" (Chinese Inventor)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,603, issued on July 8, was assigned to Changxin Memory Technologies Inc. (Hefei, China).

"Semiconductor structure and manufacturing method for same" was invented by Kang You (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes: a transistor structure and a capacitor structure that are arranged along a first direction, where the capacitor structure extends along the first direction; and a wordline staircase structure extending along the first direction, where the wordline staircase structure and the transistor structure are disposed along a second direction intersecting with the first direction. A plane perpe...