US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 8 for "Semiconductor structure and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,666, issued on July 8, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and fabrication method thereof" was invented by Guangsu Shao (Hefei, China) and Deyuan Xiao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a semiconductor structure and a fabrication method. The method includes: providing a substrate, the substrate being provided with a plurality of first trenches extending along a first direction and a plurality of second trenches extending along a second direction, and a depth of each of the plurality of first trenches being less than a depth of each of the plurality of...