US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 8 for "Semiconductor structure, method for manufacturing same and memory" (Chinese Inventor)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,971, issued on July 8, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure, method for manufacturing same and memory" was invented by Shaowen Qiu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure, a method for manufacturing the same and a memory are provided. The semiconductor structure at least includes two photolithography layers which are arranged in sequence and at least one blocking layer. Each photolithography layer includes a functional pattern and an overlay mark, and the photolithography layers include a first photolithography layer and a second photolithography laye...