US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 8 for "Memory device and ZQ calibration method" (Chinese Inventor)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,703, issued on July 8, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Memory device and ZQ calibration method" was invented by Kai Tian (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a memory device and a ZQ calibration method. The memory device includes a master chip and a plurality of slave chips. The master chip and the slave chips are each provided with a first transmission terminal and a second transmission terminal, where the first transmission terminals are connected to each other, and the second transmission terminals are connected to each other; and a first signal receiver and...